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Lobayan, R.M. - Bochicchio, R.C. - Lain, L. - Torre, A.
J Chem Phys 2005;123(14)
2005

Descripción: This work studies the partitioning of the electron density into two contributions which are interpreted as the paired and the effectively unpaired electron densities. The topological features of each density field as well as of the total density are described localizing the corresponding critical points in simple selected molecules (local formalism). The results show that unpaired electron-density concentrations occur out of the topological bonding regions whereas the paired electron densities present accumulations inside those regions. A comparison of these results with those arising from population analysis techniques (nonlocal or integrated formalisms) is reported. © 2005 American Institute of Physics.
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Tipo de documento: info:ar-repo/semantics/artículo

Armendáriz, I. - Grosskinsky, S. - Loulakis, M.
Stoch. Processes Appl. 2013;123(9):3466-3496
2013

Descripción: Zero-range processes with jump rates that decrease with the number of particles per site can exhibit a condensation transition, where a positive fraction of all particles condenses on a single site when the total density exceeds a critical value. We consider rates which decay as a power law or a stretched exponential to a non-zero limiting value, and study the onset of condensation at the critical density. We establish a law of large numbers for the excess mass fraction in the maximum, as well as distributional limits for the fluctuations of the maximum and the fluctuations in the bulk. © 2013 Elsevier B.V. All rights reserved.
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Tipo de documento: info:ar-repo/semantics/artículo

Sartarelli, S.A. - Szybisz, L.
J Chem Phys 2010;132(6)
2010

Descripción: The confinement of Ar in planar slits of two identical parallel semi-infinite walls of alkali metals, alkaline-earth metal Mg, and CO 2 is investigated within the framework of the density functional theory. It is assumed that (1) the fluid atoms interact via a recently proposed effective attractive pair potential with strength, εff, which reproduces the experimental data of the surface tension of the liquid-vapor interface at the bulk coexistence curve, and (2) the adsorption on the walls is described by ab initio potentials characterized by a well depth, Wsf. In this way the systems were studied in the framework of a realistic approach. We found that for small coverages, the slit is always filled by forming two symmetric vapor films, one at each wall. For increasing coverage the behavior depends on the ratio Wsf/εff and the temperature T. In the case of alkali metals, we found at the triple point, Tt, of the adsorbate a regime of average density ρ*av in which the ground state exhibits asymmetric density profiles, leading to the so-called spontaneous symmetry breaking (SSB) effect. The SSB appears at an average density ρ*sb1 and disappears at a higher average density ρ*sb2 . When T is increased, the range of densities ρ*sb1≤ρ*av≤ ρ* sb2 diminishes and eventually the SSB disappears at a critical temperature, Tsb, which coincides with the critical prewetting temperature Tcpw observed in the adsorption on a single wall. For T>Tcpw the slit is filled symmetrically up to the phase transition to capillary condensation. All these features are examined as a function of the strength of the substrate and the width of the slit. Furthermore, no SSB effect was found for Mg and CO2. © 2010 American Institute of Physics.
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Tipo de documento: info:ar-repo/semantics/artículo

Pasquini, G. - Serquis, A. - Moreno, A.J. - Serrano, G. - Civale, L.
J Appl Phys 2013;114(2)
2013

Descripción: Addition of nonsuperconducting phases, such as carbon nanotubes, can modify the superconducting properties of MgB 2 samples, improving the critical current density and upper critical field. A full understanding of the flux creep mechanism involved is crucial to the development of superconducting magnets in persistent mode, one of the main thrusts for the development of MgB 2 wires. In this paper we present a creep study in bulk MgB 2 samples, pure and with different amounts of carbon nanotubes additions. We conclude that the most consistent picture at low temperatures is a single vortex pinning regime, where the correlation length is limited by the grain size. We introduce a novel analysis that allows us to identify the region where the Anderson-Kim model is valid. © 2013 AIP Publishing LLC.
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Tipo de documento: info:ar-repo/semantics/artículo

Kelly, H. - Lepone, A. - Minotti, F.
J Appl Phys 2000;87(12):8316-8322
2000

Descripción: A numerical solution for the metallic-plasma-neutral-gas structure generated in a low-pressure arc is presented. The equations correspond to a spherically symmetric fluid-like steady model, valid for the outer region of the arc, and describe the ion slowing down by elastic scattering with the neutral particles. Technically, the obtention of the profiles of different magnitudes is complicated due to the existence of a critical point in the steady-state system of equations. The proposed approach to overcome this difficulty is to solve instead a pseudotransient system of equations which rapidly and efficiently relax to the stationary state. By employing this numerical method of second-order accuracy in space, the plasma and neutral gas density, the electron and ion drift velocities, the electron and neutral temperatures, and the electrostatic potential profiles are obtained from the border of the arc channel up to the discharge chamber wall. It is found that the value of the neutral gas filling pressure strongly influences the plasma density and plasma potential distributions. An important result is that metallic ions emitted from the arc channel deliver their kinetic energy to the filling gas in a gradual manner, up to a pressure-dependent point beyond which they move to the walls sustained against collisions with the gas by a self-consistent electric field. Near the mentioned point, the metallic ion density presents a peculiar behavior, showing an increase that is more pronounced at high pressures; a pattern also evident in the electrostatic potential. © 2000 American Institute of Physics.
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Tipo de documento: info:ar-repo/semantics/artículo