A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition

En:

J Appl Phys 2010;108(6)

Fecha:

2010

Formato:

application/pdf

Tipo de documento:

info:eu-repo/semantics/article
info:ar-repo/semantics/artículo
info:eu-repo/semantics/publishedVersion

Descriptores:

Abrupt transition -  Comprehensive studies -  Crystal structure and morphology -  Energy minimization -  Influence of oxygen -  Ion beam deposition -  Ion beam deposition technique -  Non-stoichiometry -  TiO

Descripción:

A comprehensive study of nonstoichiometry titanium oxide thin films (TiO x , 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO 2 particles during coalescence. © 2010 American Institute of Physics.
Fil:Marchi, M.C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.
Fil:Bilmes, S.A. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.
Fil:Alvarez, F. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.

Identificador(es):

http://hdl.handle.net/20.500.12110/paper_00218979_v108_n6_p_Marchi

Derechos:

info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by/2.5/ar